Abstract
The electrical properties of identically prepared Fe/p-InP (29 dots in total) Schottky barrier diodes on the same p-type InP single crystal have been studied in this article. The effective Schottky barrier heights (SBHs) and ideality factors obtained from current–voltage (I–V) characteristics differ from diode to diode. The SBHs and the ideality factors for the Fe/p-InP diodes ranged from 0.71 to 0.86 eV and 1.21 to 1.69, respectively. A lateral homogeneous SBH value of 0.91 eV for the Fe/p-InP diodes has been calculated from the linear relationship between barrier heights and ideality factors, which can be explained by lateral inhomogeneities of the SBHs.
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