Abstract
Anisotype heterojunctions p-Cu2ZnSnS4/n-Si were fabricated by sulfurization of metalprecursors which were deposited on a poly-Si substrate. Current -voltage characteristics are discussed and the dominating mechanisms of current transfer are determined: at a direct bias tunnel recombination processes prevail with participation of defect states on interface of heterojunction, when voltage increases Newman-s tunnel mechanism dominates. The reverse current through the heterojunctions under investigationwas analyzed within the tunnel mechanism.
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Schedule a callMore From: ACADEMICIA: AN INTERNATIONAL MULTIDISCIPLINARY RESEARCH JOURNAL
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