Abstract
The mechanisms of charge transfer in n+-CdS-p-InP-p+-InP heterostructures were studied in the temperature interval from 100 to 300 K. The forward current is determined either by tunneling via local centers (at low temperatures) or by recombination in the space-charge region. The reverse current is controlled by tunneling via local centers and by direct interband tunneling. Breakdown in these heterojunctions also proceeds by the tunneling mechanism.
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