Abstract
A general analysis is given for the effects of illumination and surface recombination on the currents flowing in a semiconductor/conductor junction. The behavior of the electron and hole quasi-Fermi levels is examined and it is shown that a priori assumptions about their flatness in the depletion region leads to contradictions in the analysis. The two theories describing currents in a Schottky barrier junction, the thermionic emission theory and the diffusion theory of Shockley are shown to have their parallels in a semiconductor/electrolyte contact. A Shockley–Read–Hall model for surface recombination was employed in the analysis and it was shown that this model reduces to the expression for surface recombination often used in the literature under certain conditions.
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