Abstract
Expressions are obtained for the majority- and minority-carrier currents flowing in an illuminated Schottky barrier device in the presence of surface recombination. The analysis assumes arbitrary shapes of the electron and hole quasi-Fermi levels in the space-charge region. The effect of bias, illumination, and surface recombination on the device are discussed. The important parameters affecting the device performance are charge transfer kinetics at the interface, the semiconductor physical parameters, and the distribution and concentration of the interface traps.
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