Current Reduction Caused by the Quantum Coupling of Hot Electrons in AlGaN/GaN Transistors

Abstract

Barrier height of AlGaN/GaN transistor is lowered by the quantum coupling of hot electrons with large transverse energy via electro‐thermal effect. The coupling effectively raises the quantized levels of hot electrons, changes the electron density of the two‐dimensional electron gas, and consequently decreases the source drain current of the transistor. Based on the theory of quantum coupling of hot electrons, the current reduction is successfully modeled. The model is able to explain the effect of gate voltage, device temperature, gate length, gate metals, passivation, field‐plate structure, traps, and electron‐phonon interaction on current reduction. It also predicts a relative decrease of 4.6% in the source drain current caused by the quantum coupling at moderately low electron temperature of 1771 K.