Abstract
In this work, it has been shown that current oscillations could be enhanced in Schottky-barrier carbon nanotube FET (SB-CNFET) particularly at the low drain voltage and small channel lengths. This oscillatory dependence on the gate voltage brings out negative differential transconductance regions. We have simulated the SB-CNTFET using a 2D quantum simulator by solving NEGF and Poisson’s equation self-consistently. A parabolic potential well profile between double barriers is formed along the transport direction of the channel which is responsible for these oscillations. Key factors that affect the current oscillations are thoroughly investigated such as drain voltage, channel length, CNT diameter, the dielectric constant of the gate oxide and temperature. The results of this work pave a way to shed light on the feasibility and enhancement of SB-CNTFET as a resonant tunneling device.
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