Abstract
A spatial temperature distribution in VO2 film was first investigated at current oscillations using infrared microscope. The oscillations are revealed to arise from the periodic formation and disappearance of a narrow high-temperature channel in VO2 film. The nature of the oscillations in VO2 films is considered from the standpoint of a well-known phenomenon: spatio-temporal instability of current flow in homogeneous semiconductors. The temperature of the channel significantly exceeds the semiconductor-metal transition temperature being the cause of film destruction and oscillations cessation.
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