Current on/off ratio enhancement through the electrical burning process in ambient with/without oxygen for the generation of high-performance aligned single-walled carbon nanotube field effect transistors

Abstract

We present characteristics of the electrical burning process with/without oxygen-ambient for parallel aligned single-walled carbon nanotube field effect transistors (SWNT-FETs). High selectivity of metallic and semiconducting nanotubes is demonstrated by an electrical burning process through partial etching of the atomic layer deposited Al2O3 layer beneath the gate electrodes. Metallic nanotubes exposed to oxygen show electrical breakdown during the burning process, resulting in the SWNT-FETs having excellent performance. Specifically, 100 μm source/drain width p-type aligned SWNT-FETs through electrical burning with local oxidation show high Ion/Ioff ratios (>103), 10 μS at a drain bias of −1 V and −100 μA at a reverse gate bias of −8 V.