Abstract
We investigate electron transport and shot noise ina single-barrier GaAs/AlGaAs heterostructure of nanometric size inthe presence of ballistic and thermalized carriers. Thecoupling between space charge and the dependence of thetransmission coefficient on energy is found to provide thepositive feedback which enhances shot noise and ultimately leadsto a current instability of S type. Theoretical results arein qualitative agreement with existing experiments and confirmrecent Monte Carlo simulations evidencing shot-noise enhancementin GaAs/AlGaAs heterostructures.
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