Abstract
Gallium arsenide p+ –n−–δ(p+)–n−– n+ regenerative switches prepared by molecular beam epitaxy are demonstrated. Initially, their operation as an optical switch is considered. The position of a third-electrode (gate) profoundly influences the switching behaviours. Current-injection mode is then discussed. Silicon controlled rectifier (SCR)-like switches can be obtained. Comparisions are made by defining the control efficiency.
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