Abstract
AbstractWe have investigated the current injected spectrum of flat‐topped LED using self‐assembled Stranski‐Krastanov (S‐K) InAs/InP quantum dots (QDs) grown by selective area low pressure metalorganic vapor phase epitaxy and a double‐capping procedure. Selective area growth using an SiO2 mask with narrow stripes was carried out to tailor a wide emission range for the QDs in sixteen arrayed waveguides. Each waveguide core con‐tained three stacked QD layers with different QD heights and Ga content in the GaInAs buffer layer. We have measured the spectrum change of current injection, and have estimated the intensity variation in each QDs layer. By increasing the FCL thickness of three QDs layers, output intensity of each layer has become equal, and we have obtained more than 500 nm spectrum width with flat‐topped spectrum shape. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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