Current-injected 1.54μm light emitting diodes based on erbium-doped GaN

Abstract

Current-injected 1.54μm emitters have been fabricated by heterogeneously integrating metal organic chemical vapor deposition grown Er-doped GaN epilayers and 365nm nitride light emitting diodes. It was found that the 1.54μm emission intensity increases almost linearly with input forward current. The results represent a step toward demonstrating the feasibility for achieving electrically pumped optical amplifiers for optical communication that possess advantages of both semiconductor optical amplifiers and Er-doped fiber amplifiers.