Abstract
We develop a non-volatile resistive switching device in a Si—SiO2—Mg structure with an on/of ratio of about 4.5 at a certain transition voltage after being stimulated by a large current. It is observed that the resistance transition voltage Vt shifts reproducibly under a reversed large current. By applying a reading voltage in the range of Vt, non-volatile resistive switching phenomena with an endurance of more than 80 cycles are observed. Moreover, it is also found that the magnetic field could shift Vt to higher values, yielding a voltage dependent room-temperature magnetoresistance in the range of 103 % at 1 T. The multifunctional properties of the silicon device suggested by this work may be beneficial to the silicon based industry.
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