Abstract
The current-induced magnetization switching (CIMS) was successfully observed in epitaxial L10-FePt/CrxPt1−x (0 ≤ x ≤ 1) heterostructures grown by molecular beam epitaxy with large perpendicular magnetic anisotropy. With increasing Cr content, the critical switching current density (Jc) in FePt/CrxPt1−x heterostructures exhibited a decreasing trend, where it was greatly reduced by 69% in FePt/Cr (3d) films compared to FePt/Pt (5d) films with strong spin–orbit coupling. Furthermore, the same switching polarities were observed for all FePt/CrxPt1−x samples, indicating that the orbital Hall effect played a dominant role in CIMS for FePt/Cr films because of opposite spin Hall angles for Cr and Pt. Our results will put forward the applications of L10-FePt in collaboration with the orbital Hall effect from 3d metals in current-controlled magnetic random access memory and neuromorphic computing.
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