Abstract
We study current-induced magnetization switching properties of a magnetic tunnel junction with junction diameter of 19 nm and resistance-area product of 6 Ωμm2 in the nanosecond regime with and without in-plane magnetic field. At zero field, for both parallel (P)-to-anti-parallel (AP) and AP-to-P switchings, the probability of switching PSW approaches unity with the increase of pulse voltage duration τP. However, under in-plane magnetic field, PSW for P-to-AP switching starts to saturate at a value lower than unity with increasing τP, while AP-to-P switching remains the same as in the absence of in-plane magnetic field. This in-plane field dependence of PSW can be partially explained by the influence of electric-field modulation of magnetic anisotropy.
Highlights
Magnetization switching in spintronics devices by electrical means is one of the most important phenomena for application
We investigate the current-induced STT switching of a CoFeB-MgO magnetic tunnel junctions (MTJs) with perpendicular easy axis with diameter of 19 nm, and report that in addition to STT, the electric-field effect appears to play a role in determining switching characteristics, which manifests itself under the presence of in-plane magnetic field
A pulse generator and dc measurement setup are connected to the MTJ through rf and dc port of a bias-tee, respectively
Summary
Magnetization switching in spintronics devices by electrical means is one of the most important phenomena for application. For magnetic tunnel junctions (MTJs), two switching schemes have been studied; one is the spin-transfer-torque-induced switching (STT-switching),[1,2] and the other is the electric-field-induced switching.[3,4,5,6] For the electric-field-induced switching, the magnetization reversal takes place through magnetization precession induced by magnetic anisotropy modulation.[3,4,5,6] In this work, we investigate the current-induced STT switching of a CoFeB-MgO MTJ with perpendicular easy axis with diameter of 19 nm, and report that in addition to STT, the electric-field effect appears to play a role in determining switching characteristics, which manifests itself under the presence of in-plane magnetic field
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