Abstract
The effect of the gate doping level on the current gain H/sub FS/ of a bipolar-mode field-effect transistor (BMFET) in the range of high drain current densities is investigated. It is demonstrated that the gate doping level can be chosen to optimize the current gain without significantly compromising the other features of the device. The behavior of H/sub FS/ is fully justified in terms of the doping dependency of the various minority-carrier transport parameters of the gate. >
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
