Abstract
The switching performances of a new generation of normally-off BMFET with a sustaining voltage of 1600 V and current gain 5 at 6 Amp, obtained by improving gate transport parameters, are presented and compared to those of a bipolar junction transistor with same die size and sustaining voltage. Turn-off times as low as 58 ns are measured on these d,evices. The phenomena involved during the switching transient are investigated with the objective to study the effects of the variation of gate doping on the switching times.
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