Current enhanced solid phase precipitation (CE-SPP) for direct deposition of multilayer graphene on SiO<inf>2</inf> from a Cu capped Co-C layer

Abstract

To improve the crystallinity of multilayer graphene (MLG) directly deposited on SiO 2 for interconnect applications, a new solid phase precipitation (SPP) process involving current stress is investigated. It is found that the MLG crystallinity precipitated from a Cu capped Co-C layer can be improved by the vertical current to the Cu/Co-C but not by the horizontal current. The current enhanced SPP (CE-SPP) is expected as a mean to improve the MLG crystallinity directly deposited on SiO 2 .