Abstract
To be used in submicronic devices like magnetic memories, magnetic tunnel junctions require low resistances. Four-probe measurements of such resistances are often altered by non-uniformity of the current distribution in the junction. The measured resistance is decreased by localised preferential conduction and increased by voltage drop in the measure electrode. Competition between these two effects is investigated as a function of the geometry. The non-linear conduction of tunnel junctions amplifies dramatically these phenomena and can modify by more than 50% the measured resistance.
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