Abstract
Application of the symmetry principle, proposed by Pierre Curie, to the growth of single crystals is considered. The basic concepts of this principle and the rules for alignment of the crystallographic symmetry of a seed crystal with the external symmetry of the thermal field formed by the crucible with a melt are shown. The modified Stepanov method, developed at the General Physics Institute, Russian Academy of Sciences, on the basis of the Czochralski and Stepanov methods, is described, and its advantages are demonstrated. Examples of application of this technique to the growth of complex oxide crystals are given.
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