Abstract
AbstractWe examine CuPt-B atomic sublattice ordering in Ga0.51In0.49P (GaInP) and Ga0.47In0.53As (GaInAs) III-V alloy films grown by atmospheric- and low-pressure metalorganic chemical vapor deposition on singular and vicinal (001) substrates. The influences of growth conditions and substrate miscut on double- and single-variant ordered microstructures are investigated using transmission electron microscopy (TEM). Relatively thick (>1–2 litm) double-variant ordered GalnP and GaInAs films show complementary superdomain formation. Single-variant ordered films on <111>B-miscut substrates contain single-phase domains, separated by antiphase boundaries (APBs). The appearance of APBs in TEM dark-field images is anticipated from electron diffraction theory.
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