Abstract
Time-dependent dielectric breakdown (TDDB) of sub-half-micron Cu interconnects was investigated with regard to the waiting time between Cu-CMP and barrier dielectric deposition. Breakdown voltage and TDDB lifetime between adjacent Cu wires deteriorated abruptly as the waiting time in air passed 4 days. This is due to Cu-ion migration phenomena on the CMP-surface. The degradation can be improved by keeping the samples in a N/sub 2/-box or adopting post-cleaning. This TDDB degradation was observed on any Cu barrier dielectrics in this experiment. In addition, another phenomenon related to Cu TDDB lifetime was discovered, namely a 'fine line effect'. As Cu wire width becomes finer, the TDDB lifetime also decreases further because of the interaction of the electric field at the CMP-surface. It was predicted that the TDDB lifetime for next-generation technology was possibly insufficient for 10-year reliability by testing several low-k dielectrics and Cu barrier dielectrics.
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