Abstract
Arrested precipitation methode used to synthesize CuInSe2 (CIS) nanocrystals were added to a hot solvent with organic capping ligands to control nanocrystal formation and growth. CIS thin films deposited onto Soda-Lima Glass (SLG) substrate by spray-coat, then selenized in Ar-atmosphere to form CIS thin films. PVs were made with power conversion efficiencies of 0.631% as-deposited and 0.846% after selenization, for Mo coated, under AM 1.5 illuminations. (XRD) and (EDX) it is evident that CIS have chalcopyrite structure as the major phase with a preferred orientation along (112) direction and Cu:In:Se nanocrystals is nearly 1:1:2 atomic ratio.
Highlights
CIS and (CIGS) chalcopyrite semiconductors are considered popular as alight absorption layer of Photovoltaics (PVs)
CIS can be synthesized as thin film, has a large light absorption coefficient and appropriate direct band gap is good for the absorption of sunlight. selfregeneration function of CIS is relatively easy to process it (Zhang et al, 1998; Tani et al, 2012)
The flask is filled with N2 and heated to 240°C for 1 h and when the temperature reached to 180°C injected the sol. 2 was injected, the color of solution changed to black immediately
Summary
CIS and (CIGS) chalcopyrite semiconductors are considered popular as alight absorption layer of Photovoltaics (PVs). Many methodes are used for the synthesized of CIS films like elemental co-evaporation (Szot and Haneman, 1984), sputtering (Parretta et al, 1993) and electro deposition (Tzvetkova et al, 1997). These methods becomes necessary to produce device quality CIS films through a low-cost, eco-friendly and scalable process for mass production of films for PV applications. Both processes are extremely toxic to health and environment due to use Se vapor or H2Se gas
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