Cu(In,Ga)(S,Se) 2 thin films prepared by thermal crystallization from CuInGaSe/CuGaSe precursor in S/Se atmosphere

Abstract

Polycrystalline Cu(In,Ga)(S,Se)2 thin films were fabricated by thermal crystallization from CuInGaSe(Ga/(In+Ga)=0.3)/CuGaSe stacked precursors in sulphur and selenium mixing atmosphere. EPMA analysis showed that the S/(S+Se) mole ratio in the thin films prepared at S/(S+Se)=0.1 and 0.8 in the quartz ampoule were around 0.3 and 0.9, respectively, independent of crystallization temperature. X-ray diffraction studies revealed that the thin films had a chalcopyrite Cu(In,Ga)(S,Se)2 structure and the preferred orientation to the 112 plane. The SEM images demonstrated that the grain sizes in Cu(In,Ga)(S,Se)2 thin films significantly increased with increasing the annealing temperature. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)