Abstract
AbstractCu2ZnSn(S,Se)4 thin films were prepared by annealing the Cu/Sn/Zn precursors in sulfur/selenium mixing atmosphere. From EPMA analysis, the S/(S+Se) mole ratio in the thin films increased with increasing the S/(S+Se) mole ratio in the sealed ampoule. XRD study showed that the thin films had a kesterite phase in Cu2ZnSn(S,Se)4 and the a‐ and c‐axis constants decreased with increasing the S/(S+Se) mole ratio in the thin films, following the usual linear Vegard behavior. Cu2ZnSn(S,Se)4 thin film solar cells annealed in S/Se atmosphere with an addition of Sn demonstrated Voc=460 mV, Isc=6.99 mA/cm2 and Voc=605 mV, Isc=5.53 mA/cm2. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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