Abstract
In this paper, CuIn0.7Ga0.3Se2 (CIGS) thin films are deposited on both glass (SLG) and glass/SnO2:F (SLG/FTO) substrates, by close-spaced vapor transport technique. The Hall effect measurements are performed in the temperature range (300–438 K) for the two SLG/CIGS samples namely CIGS1 and CIGS2, grown at substrate temperature (Ts) of 470 °C and 510 °C, respectively, to investigate the temperature effect on the electrical parameters such as hole concentration (p), conductivity (σ) and mobility (µ). As results, from Arrhenius diagram of (p) and (σ), bandgap energy (Eg) of about 1.38 eV and 1.24 eV are extracted for CIGS1 and CIGS2, respectively. Besides, activation energies (Ea) at 563.9 meV and 239.4 meV are determined for CIGS1 whereas values at 584.2 meV and 72.7 meV are obtained for CIGS2. Furthermore, average mobilities of 1.83 cm2/V s and 1.77 cm2/V s are achieved for CIGS1 and CIGS2 thin films, respectively. Pure aluminum (Al) Schottky contacts are deposited on the front side of FTO/CIGS thin film-devices by physical vapor deposition. Current–voltage (I–V) characteristics are measured and used to extract the electrical parameters of FTO/CIGS/Al Schottky diode using the one diode model. The electrical parameters including series resistance (Rs) of about 93.7 Ω and an ideality factor (n) around 3.47 indicate that the generation–recombination mechanism is predominant.
Highlights
The photovoltaic (PV) material Cu–III–VI2 is currently one of the most promising materials for producing thin-film solar cells
scanning electron microscope (SEM) surface morphologies of CIGS1 and CIGS2 thin films are shown in Fig. 2a, b
One of the advantages of close-spaced vapor transport technique (CSVT) is the ability to produce thin film with structural properties allowing a good photovoltaic response. This evidence is shown by the experimental data obtained by energy-dispersive X-ray spectroscopy (EDS) measurements (Table 1), which confirms that near-stoichiometric compositions were obtained
Summary
The photovoltaic (PV) material Cu–III–VI2 is currently one of the most promising materials for producing thin-film solar cells. C uInSe2 (CIS) with a chalcopyrite structure has been used as an absorber layer in PV devices [1]. It is a direct bandgap semiconductor material and has a large absorption coefficient (105 cm−1) [2]. To produce efficient PV devices it is important to match the bandgap of the absorber layer to the solar spectrum [3]. It is well known that the performance of the devices based on semiconductors and integrated circuits depends on the quality of the metal/semiconductor contacts. Schottky contacts (i.e., rectifier) have been used as test means to
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