Abstract
Real-time spectroscopic ellipsometry (RTSE) is shown to be an effective contactless probe of copper selenide thin-films used as a precursor material during 2-stage and 3-stage growth of Cu(In,Ga)Se <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> solar cells. The Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</sub> Se thin-films were deposited by a hybrid sputtering/evaporation process onto native oxide covered Si(100) and studied by RTSE, and by complementary atomic force microscopy (AFM), X-ray diffractometry, transmission and reflection (T&R) spectrophotometry, and Hall Effect measurements. RTSE deduction of the total charge carrier densities (n), electronic scattering times (τ), fundamental energy bad-gaps (E <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">g</sub> ), and electrical resistivities (ρ) of the Cu <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2-x</sub> Se thin-films agree well with post-deposition ex-situ measurements. The RTSE measurement reveals growth mechanism and dielectric functions which ultimately reflect the electronic behavior.
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