Abstract
Developments in thermoelectric (TE) transparent p-type materials are scarce and do not follow the trend of the corresponding n-type materials – a limitation of the current transparent thermoelectric devices. P-type thermoelectric thin films of CuI have been developed by three different methods in order to maximise optical transparency (>70% in the visible range), electrical (σ = 1.1 × 104 Sm−1) and thermoelectric properties (ZT = 0.22 at 300 K). These have been applied in the first planar fully transparent p-n type TE modules where gallium-doped zinc oxide (GZO) thin films were used as the n-type element and indium thin oxide (ITO) thin films as electrodes. A thorough study of power output in single elements and p-n modules electrically connected in series and thermally connected in parallel is inclosed. This configuration allows for a whole range of highly transparent thermoelectric applications.
Highlights
Wide band-gap metal oxide semiconductors are often used in transparent applications, such as photodetectors, solar cells, light-emitting diodes, etc
Structural, morphological and optoelectronic properties of p-type CuI thin films fabricated by thermal evaporation of CuI powder, vapour iodination of Cu substrate, and solid iodination of a Cu substrate, were fully characterized prior to their Thermoelectric generators (TEGs) application
As evidenced in the above results, the fabrication of CuI thin films by the three different methods followed a thorough study of films in terms of their crystallography, morphology, UV-vis-NIR spectroscopy and thermoelectric properties
Summary
Wide band-gap metal oxide semiconductors are often used in transparent applications, such as photodetectors, solar cells, light-emitting diodes, etc. Despite of their potential in novel applications in the field of energy harvesting, p-type transparent semiconductors usually lack the level of performance required in both transparency and electrical conductivity. Edge made up of copper 3d and iodine 5p states, the electron hole density is much higher on CuI than in Cu(I) oxides[7] These characteristics resulted in today’s interest in CuI and its application in the field of optoelectronics, photocatalytic water splitting, electrode contacts in organic solar cells and OLEDs, and recently in CuI/Al-doped ZnO heterojunctions8 – allowing further introduction of CuI thin films in transparent electronics[3]. Thermoelectric generators (TEGs) made of CuI have been considered, including recent reports of CuI thin films on a flexible substrates[9,10,11], but to date only single-module-thermoelectric studies have been reported and are not fully transparent
Sign-in/Register to view highlights & summary Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
