Abstract

SnS films were prepared by a chemical bath deposition process in which the concentration of nitrilotriacetic acid, acting as the complexing agent, promoted an increase in film thickness, better grain connectivity, and the formation of single-phase cubic π-SnS. The optical and electrical studies in these films demonstrated that the enhancement of photosensitivity from 19.59 to 22.5 was associated with the elimination of the SnS2 phase, which consequently led to a band gap narrowing from 1.82 to 1.77 eV.

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