Abstract
We propose a method which delivers optimal cubic GaN/AlGaN quantum well profiles such that both the Stark effect and peak intersubband absorption from the ground to the first excited electronic state, in a prescribed range of bias electric fields, are maximized. Our method relies on the Genetic Algorithm which finds globally optimal structures with a predefined number of embedded layers. We investigate simple rectangular quantum wells with embedded step layers for applications in tunable mid-infrared photodetectors. The effects of band nonparabolicity are taken into account to refine our model.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
