Abstract
Boron nitride was synthesized by nitrogen ion implantation. Boron films were prepared as implantation targets on single-crystal Si(100) substrates by 13.56-MHz radio frequency sputtering. The diatomic single 30-keV nitrogen ions were chosen for implantation. The implantation dose ranged from 1×10 17 ions/cm 2 to 2×10 18 ions/cm 2. The films were characterized using a transmission electron microscope. Several phases of boron nitride were found at the medium implantation dose. At the high dose of 2×10 18 ions/cm 2, the pure c-BN phase was observed. It is believed that the transition from the low ordered phases to c-BN phase occurred during implantation. The films showed good adhesion to the Si substrate.
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