Cu2ZnSnS4 films with different preferred orientations prepared by pulsed DC magnetron sputtering from a quaternary ceramic target

Abstract

Cu2ZnSnS4 (CZTS) films applicable to an absorber material in thin film solar cells were prepared at room temperature by pulsed DC magnetron sputtering from a CZTS ceramic target, and the effects of sputtering pressure on the phase, preferred orientation and composition of the deposited CZTS films were investigated. The results indicated that the dominant phase in the deposited films was Kesterite structure, only having the trace impurity phase of Cu2−xS. The preferred orientation was gradually converted from (2 2 0) to (1 1 2) with increasing sputtering pressure. Moreover, the composition of the deposited films was also affected by the sputtering pressures.