Abstract
We demonstrated for the first time the Cu patterning on Si using Ti and Cu oxide (TiCu-ox) films patterned by photolithography and electroless plating without etching or surface modification. The TiCu-ox films had a porous structure and acted as adhesion layers. The TiCu-ox films were patterned by photolithography on Si and glass for comparison, followed by Cu deposition by electroless plating. Fine Cu patterns on the patterned TiCu-ox films were formed. The smallest line/space widths on glass and Si were 3.2/0.8 and 3.6/4.4 µm, respectively. The deposited Cu layers had high adhesion strength and low sheet resistance.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
