Abstract
Step bunching induced by Cu adsorption on a Si(111) vicinal surface was studied by reflection electron microscopy. A surface with a regular array of steps changes to wide (111) terraces and step bands due to the formation of the incommensurate (IC) Cu-adsorbed structure on the Si(111) terraces. The maximum terrace width of the IC domains depends on the deposition conditions of Cu, and is wider at higher temperature and at lower deposition rate. (441) and (331) facets are formed on a vicinal Si(111) surface inclined towards the 〈112〉 direction, while no facet with definite index is noticed on a vicinal surface inclined towards the 〈110〉 direction.
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