Abstract
Dynamic processes of Cu-adsorption-induced step bunching on Si(111) vicinal surfaces during Cu deposition were observed by reflection electron microscopy. Owing to formation of the Si(111)–Cu incommensurate (IC) structure step bunching occurs and a hill-and-valley structure composed of (111) terraces and step bands is formed. Expansion of the Si(111) terraces with the IC structure is anisotropic and flat terraces with a band shape elongated in the direction perpendicular to the miscut direction of the vicinal surface are formed. Time evolution of the (111) terrace width along the miscut direction was analyzed at temperatures between 450 and 550°C. The width seems to develop in a form of t α as a function of time t after nucleation of a (111)-IC terrace. The exponent α increases gradually with increasing the substrate temperature. This suggests that the kinetics governing the step bunching change with increasing temperature.
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