Cu/In 비에 따른 CuInS2박막의 특성에 관한 연구

Abstract

[ <TEX>$CulnS_2$</TEX> ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature <TEX>$200^{\circ}C$</TEX>. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor <TEX>$CuInS_2$</TEX> thin films with non-stoichiometry composition. <TEX>$CuInS_2$</TEX> thin film was well made at the annealed <TEX>$200^{\circ}C$</TEX> of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for <TEX>$200^{\circ}C$</TEX> material can be conveniently described by non-molecularity<TEX>$({\Delta}x=[Cu/In]-1)$</TEX> and non-stoichiometry <TEX>$({\Delta}y=[{2S/(Cu+3In)}-1])$</TEX>. The variation of <TEX>${\Delta}x$</TEX> would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The <TEX>${\Delta}y$</TEX> parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with <TEX>${\Delta}y>0$</TEX> would behave as p-type material while <TEX>${\Delta}y<0$</TEX> would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was <TEX>$9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$</TEX>, respectively.