Cu filling of TSV using various current forms for three‐dimensional packaging application

Abstract

PurposeThe purpose of this paper is to overview the effect of electroplating current wave forms on Cu filling of through‐silicon‐vias (TSV) for three‐dimensional (3D) packaging.Design/methodology/approachThe paper takes the form of a literature review.FindingsEffective TSV technology for 3D packaging involves various processes such as via formation, filling with conductive material, wafer thinning, and chip stacking. Among these processes, high‐speed via filling without defect is very important for applying the TSV process to industry with a lower production cost. In this paper, the effects of various current forms on Cu electroplating of TSV such as direct current (DC), pulse current (PC), pulse reverse current (PRC), and periodic pulse reverse current (PPR) are described in detail including recent studies.Originality/valueTSV is a core technology for high density 3D packaging. This paper overviews the recent studies of various current forms on Cu‐filling of TSV.