Abstract
Electrical and optical properties and structural change of vacuum-deposited Cu2-xSe films due to electromigration have been investigated using Au/Cu2-xSe/Cu(or Au) samples. DC voltages were applied to them to cause Cu migration. Under the bias in which the polarity of the Cu electrode was negative, Cu in Cu2-xSe films decreased gradually, which increased Cu vacancies and carrier density. Under the bias in which the Cu electrode was positive, Cu ions were supplied to Cu2-xSe films and Cu vacancies were filled, which decreased carrier density and changed the film structure to α-Cu2-xSe. Small blocks of Cu accumulation were formed at the negative electrode edge.
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