Cu–Cu Bonding Using Selective Cobalt Atomic Layer Deposition for 2.5-D/3-D Chip Integration Technologies

Abstract

The feasibility of using selective thermal cobalt metal (Co) atomic layer deposition (ALD) as high density Cu–Cu interconnect bonding is demonstrated at a low temperature (200 °C) and with minimal surface pretreatment. A Cu/Gap/Cu structure, which emulates 3-D ICs stacking is fabricated. Cobalt ALD showing seamless interconnection between copper (Cu) pads with 30- $\mu \text{m}$ pitch is demonstrated with greater than 90% yield through electrical measurements, SEM inspection, EDS, and focused ion beam (FIB) cross section.