Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

Abstract

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features' such as high nonlinearity (∼107)' ultra-low off-state leakage current (∼pA)' robust endurance (> 1010)' and sufficient on-state current density (∼1 MA/cm2). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO2 material. By introducing a tunneling layer in series with the TS layer' the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application.