Abstract
Containing an array of vertically coupled InAs quantum dots (QDs) in GaAs matrix, multilayer periodic InAs-GaAs structures grown by molecular beam epitaxy, were investigated by SR-CTR (synchrotron radiation-crystal truncation rods) and double-crystal X-ray diffraction (DCXRD). X-ray diffraction is very sensitive to the formation of vertically coupled QDs array, which changes spatial distribution of the scattered radiation. The appreciable elongation of superstructural and substrate spots in lateral directions is explained by occurrence of an additional long-range lateral ordering of scattering objects and quasi-periodic deformation relief in the top GaAs layer. Perfect coherently-connected InAs and GaAs clusters are introduced as a novel qualitative structural model of scattering layers. Based on this model the main features of spatial distribution of diffracted intensity have been explained.
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