Abstract
Zn2-2xCuxInxSe2 crystals were synthesized by the directional freezing method using elementary components as starting materials. The crystals were also used as target materials. Thin films of Zn2-2xCuxInxSe2 were prepared for the first time by pulsed laser deposition using a Nd:YAG laser and glass substrates at temperatures in the range 470 – 490 °C. The growth conditions of these samples and their composition, structural, electrical and optical properties have been studied. Especially the copper rich Zn2-2xCuxInxSe2 materials were investigated.
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