Crystallographic rotation effect on the particle and spin across a half metal/semiconductor junction with Dresselhaus spin-orbit interaction

Abstract

Theoretical studies were conducted on probability, conductance and spin polarization through a junction between a half metal (HM)/semiconductor with Dresselhaus spin-orbit coupling (DSOC), using the scattering theory and the continuous model in a two-dimensional system. The focus was on how the bulk orientation of the DSOC affects the charge and spin polarization. Results showed that the crystal face (100) makes a negative perpendicular to the normal wave vector of the system, resulting in a maximum value of the conductance spectrum and the spin polarization. However, the maximum value of the spin polarization can occur with any crystallographic orientation when the applied voltage reaches the crossing point of the DSOC. Moreover, the electron incident angle injection can cause a gap between in the transmission probability with spin up and spin down, corresponding to higher charge and spin polarization across the junction.