Abstract
Dielectric constants were compared between SrTiO3(STO) (100) and (110) films, which were epitaxially grown on Pt-deposited MgO (100) and MgO(110) single crystals, respectively. Epitaxial STO films with different orientation were prepared by rf sputtering. The relations between crystallographic orientation of the dielectric films and the substrates were confirmed to be (100) STO|| (100) Pt|| (100) MgO and (110) STO|| (110) Pt|| (110) MgO. The dielectric constant of the (100) oriented STO film was greater than that of the (110) oriented one. The orientation dependence of the dielectric constant is discussed from the viewpoint of thermodynamic phenomenology. It is clarified that the difference in interface energy between the dielectric and the electrode has an important role in determining the difference in the dielectric constant.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
