Crystallographic Aspects of Low Energy Boron Implantation Into Silicon

Abstract

ABSTRACTThe computer program MARLOWE has been used to investigate low energy boron implantation into silicon. When implanted in a “random” direction at 5 keV, the most deeply penetrating ions are seen to have spent an appreciable part of their path travelling in <001>, <011> or <112> axial directions or in {111} or {220} planar channels. Channeling was then investigated more directly by observing the mean path travelled by the ions in the direction of incidence as a function of both azimuthal and tilt angles between the direction of incidence and the 001 direction. At 5 keV, {111} planar channeling and <110>, <112>, <111> and <100> axial channeling is prominent, with {220} planar and <310> and <114> axial channeling observed to a lesser degree. Higher order planar channeling such as {400}, {331}, {422} or (511} was not observed at 5 keV. At 0.75 keV only <110>. <100> and <112> axial channeling and {111} planar channeling remained.