Abstract
Effects of axial and planar channeling in Si(100) crystals on junction depth and sheet resistance control are studied for the case of shallow junction implants. Whole-wafer sheet resistance mapping, SIMS and spreading resistance profiling are used to characterize the effects of tilt and azimuthal angle variations for electrostatic and mechanical-scan implanters. Additional effects studied include critical angle variations with atomic mass and ion energy, beam scan angles for electrostatic-scan systems, implants through thin dielectric layers, wafer flexing over heat-sink pads and errors in crystal orientation. Planar and axial channel critical angles are modeled for B, P and As implants into Si(100) for energies between 20 and 200 keV. System requirements for avoidance of direct channeling effects are reviewed for IC production conditions.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
