Crystallization Temperature Limit of (Ba,Sr)TiO3 Thin Films Prepared by a Non Oxocarbonate Phase Forming CSD Route

Abstract

A new chemical solution deposition (CSD) route for the fabrication of Ba0.7Sr0.3TiO3 (BST) thin films has been developed which completely prevents the formation of an intermediate oxo-carbonate phase. The latter has been reported previously by several authors to be responsible for increased crystallization temperatures. Barium and strontium diaminoethoxides were synthesized starting from pure barium and strontium metal and aminoethanol. These alkoxides were found to be readily soluble in a wide range of solvents and thus were excellent candidates for the CSD process. To prepare a stable precursor solution the aminoalkoxides were dissolved in 2-butoxyethanol and then used for the deposition of BST thin films. We conclude that the minimum crystallization temperature of 600∘C to be independent of the formation of the oxo-carbonate phase. DTA-TGA were performed on the precursors and their solutions to study their decomposition behaviour. All films annealed at different temperatures were physically characterized by XRD, IR, and SEM. The films prepared by this route at 650∘C were found to have high dielectric constant and the leakage currents were comparable to BST films prepared by normal carboxylate based routes at 750∘C.