Crystallization properties and structural evolution of amorphous Ti-doped Sn20Sb80 thin layers induced by heating and irradiating

Abstract

Sb-rich Sn20Sb80 thin layers with different titanium components were comprehensively investigated in terms of the crystallization properties and structural characterization. The phase transition behaviors induced by heating and irradiating were obtained from in situ resistance and reflectivity measurement. After doping the titanium element, the phase transformation temperature and resistance enhance remarkably, meaning the better thermal stability and lower energy consumption of the Sn20Sb80 material. The structural analyses were characterized by x-ray diffraction, transmission electron microscopy, and Raman spectroscopy, respectively, proving that the foreign titanium atoms can block the crystallization process and reduce the grain size. All the results illustrate that doping suitable titanium will be a desirable technique to regulate the crystallization properties of the Sn20Sb80 material.