Abstract
This work can partially contribute to the direct growth of bulk substrate crystals of TSS (Ternary Solid Solutions) -- (Ga.In)Sb -- with a lattice parameter “a” constant throughout the significant part of the ingot length. The combination of our original methods CAM-S (A Crystallization Method Providing Composition Autocontrol in Situ) and COM-S (Calculation Method of Optimal Molten-Solution Composition) has been used. Potential possibilities of COM-S are illustrated on 3D ternary phase diagrams of several III–V systems. The combination of both methods permits growth of crystalline ingots with “a” a priori chosen and calculated. This is illustrated in the growth of GaInSb TSS. The deviation from the constancy of “a” can be less than 0.033% (0.2 pm) with a 75 mm length. Crystals possess a mosaic structure at this stage.
Published Version
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